Invention Grant
- Patent Title: Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method
- Patent Title (中): 等离子体装置,磁场控制方法和半导体制造方法
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Application No.: US14183670Application Date: 2014-02-19
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Publication No.: US09567668B2Publication Date: 2017-02-14
- Inventor: Chih-Chien Chi , Shing-Chyang Pan , Kuan-Chia Chen , Yao-Jen Chang , Huang-Yi Huang , Ching-Hua Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/35 ; H01J37/34 ; C23C14/54

Abstract:
Embodiments of a plasma apparatus are provided. The plasma apparatus includes a processing chamber and a wafer chuck disposed in the processing chamber. The plasma apparatus also includes a target element located over the wafer chuck and an electromagnet array located over the target element and having a number of electromagnets. Some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element. The magnetic-field zone is moved during a semiconductor manufacturing process.
Public/Granted literature
- US20150235823A1 PLASMA APPARATUS, MAGNETIC-FIELD CONTROLLING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD Public/Granted day:2015-08-20
Information query
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