Invention Grant
- Patent Title: DRAM with SDRAM interface, and hybrid flash memory module
- Patent Title (中): 具有SDRAM接口的DRAM和混合闪存模块
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Application No.: US14763019Application Date: 2013-03-27
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Publication No.: US09569144B2Publication Date: 2017-02-14
- Inventor: Yutaka Uematsu , Satoshi Muraoka , Hideki Osaka , Masabumi Shibata , Yuusuke Fukumura , Satoru Watanabe , Hiroshi Kakita , Akio Idei , Hitoshi Ueno , Takayuki Ono , Takashi Miyagawa , Michinori Naito , Taishi Sumikura , Yuichi Fukuda
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- International Application: PCT/JP2013/059155 WO 20130327
- International Announcement: WO2014/155593 WO 20140210
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G06F3/06 ; G11C5/04 ; G06F13/16 ; G11C7/10

Abstract:
When DRAMs that are high-speed memories and flash memories that are lower in speed but can be larger in capacity than the DRAM are to be mounted on a DIMM, what matters in maximizing CPU memory bus throughput is the arrangement of the mounted components. The present disclosure provides a memory module (DIMM) that includes memory controllers arranged on the module surface closer to a socket terminal and DRAMs serving as high-speed memories arranged on the back surface. Nonvolatile memories as large-capacity memories are arranged on the side farther from the socket terminal.
Public/Granted literature
- US20150355846A1 DRAM with SDRAM Interface, and Hybrid Flash Memory Module Public/Granted day:2015-12-10
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