Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14618612Application Date: 2015-02-10
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Publication No.: US09570049B2Publication Date: 2017-02-14
- Inventor: Satoshi Saito , Takeshi Naruse
- Applicant: Synaptics Japan GK
- Applicant Address: JP Tokyo
- Assignee: Synaptics Japan GK
- Current Assignee: Synaptics Japan GK
- Current Assignee Address: JP Tokyo
- Agency: Patterson + Sheridan, LLP
- Priority: JP2014-023201 20140210
- Main IPC: G09G5/18
- IPC: G09G5/18 ; G09G3/36 ; H03K3/012

Abstract:
The semiconductor device includes: a select circuit which selects, from output signals of tiding generators, timing signals formed by one timing generator; another select circuit which is disposed in a stage after the select circuit, and selects the tiding signals selected by the first select circuit or signals regulated in polarity, and outputs the selected signals outward; and a control register provided for variably setting the polarities of the signals regulated in polarity in units of the signals. If abnormal power supply cutoff of the semiconductor device is detected, the second select circuit is switched from the state of selecting the timing signals to the state of selecting the signals regulated in polarity in response to the detection.
Public/Granted literature
- US20150228251A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-08-13
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