Invention Grant
- Patent Title: Memory with deferred fractional row activation
- Patent Title (中): 具有延迟分数行激活的内存
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Application No.: US15138424Application Date: 2016-04-26
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Publication No.: US09570126B2Publication Date: 2017-02-14
- Inventor: James E. Harris , Thomas Vogelsang , Frederick A. Ware , Ian P. Shaeffer
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12 ; G11C5/02 ; G11C7/10 ; G11C11/4076 ; G11C11/408 ; G11C11/4091 ; G11C7/06 ; G11C7/08 ; G11C7/22

Abstract:
Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.
Public/Granted literature
- US20160307609A1 MEMORY WITH DEFERRED FRACTIONAL ROW ACTIVATION Public/Granted day:2016-10-20
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