Invention Grant
US09570141B2 Memory device having a transistor including a semiconductor oxide
有权
具有包括半导体氧化物的晶体管的存储器件
- Patent Title: Memory device having a transistor including a semiconductor oxide
- Patent Title (中): 具有包括半导体氧化物的晶体管的存储器件
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Application No.: US14225525Application Date: 2014-03-26
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Publication No.: US09570141B2Publication Date: 2017-02-14
- Inventor: Toshihiko Saito
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-005710 20110114
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/401 ; G11C11/405 ; G11C29/50

Abstract:
To provide a memory device which can perform verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, accurately in a short time. Each memory cell includes at least a first capacitor, a second capacitor, and a transistor which functions as a switching element for controlling supply, storage, and release of charge in the first capacitor and the second capacitor. The capacitance of the first capacitor is thousand or more times the capacitance of the second capacitor, preferably ten thousand or more times the capacitance of the second capacitor. In normal operation, charge is stored using the first capacitor and the second capacitor. In performing verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, charge is stored using the second capacitor.
Public/Granted literature
- US09177629B2 Memory device having a transistor including a semiconductor oxide Public/Granted day:2015-11-03
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