Invention Grant
US09570148B2 Internal voltage generation circuit, semiconductor memory device and semiconductor memory system
有权
内部电压产生电路，半导体存储器件和半导体存储器系统
- Patent Title: Internal voltage generation circuit, semiconductor memory device and semiconductor memory system
- Patent Title (中): 内部电压产生电路，半导体存储器件和半导体存储器系统
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Application No.: US14326123Application Date: 2014-07-08
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Publication No.: US09570148B2Publication Date: 2017-02-14
- Inventor: Hyun-Jong Jin
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0016117 20140212
- Main IPC: G11C7/04
- IPC: G11C7/04 ; G11C11/4074 ; G11C16/04 ; G11C16/24 ; G11C16/26
Abstract:
An internal voltage generation circuit includes a charging unit suitable for charging electrical charges for a time corresponding to a control signal; a charge control unit suitable for generating the control signal, which is activated for a time corresponding to temperature information, and controlling a charging operation of the charging unit; and an output unit suitable for generating an internal voltage based on charge amount by the charging operation.
Public/Granted literature
- US20150228326A1 INTERNAL VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM Public/Granted day:2015-08-13
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