Invention Grant
US09570340B2 Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride
有权
通过离子注入蚀刻晶体半导体材料，然后基于氯化氢进行化学蚀刻的方法
- Patent Title: Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride
- Patent Title (中): 通过离子注入蚀刻晶体半导体材料，然后基于氯化氢进行化学蚀刻的方法
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Application No.: US14426029Application Date: 2013-09-04
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Publication No.: US09570340B2Publication Date: 2017-02-14
- Inventor: Laurent Grenouillet , Maud Vinet , Romain Wacquez
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1258263 20120905
- International Application: PCT/EP2013/068299 WO 20130904
- International Announcement: WO2014/037410 WO 20140313
- Main IPC: H01L21/762
- IPC: H01L21/762 ; B82Y40/00 ; H01L21/302 ; H01L21/306 ; H01L21/3065 ; H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/266
Abstract:
The invention provides a method of etching a crystalline semiconductor material (114), the method being characterized in that it comprises: at least one ion implantation performed by implanting a plurality of ions (121) in at least one volume (113) of the semiconductor material (114) in such a manner as to make the semiconductor material amorphous in the at least one implanted volume (113), and as to keep the semiconductor material (114) in a crystalline state outside (112) the at least one implanted volume (113); and at least one chemical etching for selectively etching the amorphous semiconductor material relative to the crystalline semiconductor material, so as to remove the semiconductor material in the at least one volume (113) and so as to keep the semiconductor material outside (112) the at least one volume (113).
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