One method includes forming a conductive feature in a dielectric layer on a substrate for a semiconductor device. A hard mask layer and an underlying etch stop layer are formed on the substrate. The hard mask layer and the underlying etch stop layer are then patterned. The patterned etch stop layer is disposed over the conductive feature. At least one of the patterned hard mask layer and the patterned etch stop layer are used as a masking element during etching of a trench in the dielectric layer adjacent the conductive feature. A cap is then formed over the etched trench. The cap is disposed on the patterned etch stop layer disposed on the conductive feature.