Invention Grant
US09570460B2 Spacer passivation for high-aspect ratio opening film removal and cleaning
有权
间隔钝化用于高纵横比打开薄膜去除和清洁
- Patent Title: Spacer passivation for high-aspect ratio opening film removal and cleaning
- Patent Title (中): 间隔钝化用于高纵横比打开薄膜去除和清洁
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Application No.: US14620674Application Date: 2015-02-12
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Publication No.: US09570460B2Publication Date: 2017-02-14
- Inventor: Senaka Krishna Kanakamedala , Yao-Sheng Lee , Raghuveer S. Makala , George Matamis
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L21/311 ; H01L21/28 ; H01L21/02
Abstract:
A method of making a semiconductor device includes forming a stack of alternating layers of a first material and a second material over a substrate, etching the stack to form at least one opening in the stack such that a damaged region is located on a bottom surface of the at least one opening, forming a masking layer on a sidewall of the at least one opening while the bottom surface of the at least one opening is not covered by the masking layer, and further etching the bottom surface of the at least one opening remove the damaged region.
Public/Granted literature
- US20160035742A1 SPACER PASSIVATION FOR HIGH-ASPECT RATIO OPENING FILM REMOVAL AND CLEANING Public/Granted day:2016-02-04
Information query
IPC分类:
