Invention Grant
US09570576B2 Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
有权
用于形成具有通过阳极氧化形成的绝缘部件的半导体器件的方法
- Patent Title: Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
- Patent Title (中): 用于形成具有通过阳极氧化形成的绝缘部件的半导体器件的方法
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Application No.: US14102290Application Date: 2013-12-10
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Publication No.: US09570576B2Publication Date: 2017-02-14
- Inventor: Andreas Meiser , Anton Mauder , Markus Zundel , Hans-Joachim Schulze , Franz Hirler , Hans Weber
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/66 ; H01L21/02 ; H01L21/306 ; H01L29/06 ; H01L21/768 ; H01L29/739 ; H01L29/78 ; H01L29/40 ; H01L29/861
Abstract:
A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate.
Public/Granted literature
- US20150162418A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2015-06-11
Information query
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