Invention Grant
- Patent Title: Magnetic device and method of fabricating the same
- Patent Title (中): 磁性装置及其制造方法
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Application No.: US13763464Application Date: 2013-02-08
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Publication No.: US09570670B2Publication Date: 2017-02-14
- Inventor: ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
- Applicant: ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2012-0079269 20120720
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
Public/Granted literature
- US20140021566A1 MAGNETIC DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-23
Information query
IPC分类:
