Invention Grant
- Patent Title: Method and processing apparatus for fabricating a magnetic resistive random access memory device
- Patent Title (中): 用于制造磁阻随机存取存储器件的方法和处理装置
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Application No.: US14794796Application Date: 2015-07-08
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Publication No.: US09570673B2Publication Date: 2017-02-14
- Inventor: Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
- Applicant: Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2014-0161006 20141118
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/22
Abstract:
Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
Public/Granted literature
- US20160141496A1 METHOD AND PROCESSING APPARATUS FOR FABRICATING A MAGNETIC RESISTIVE RANDOM ACCESS MEMORY DEVICE Public/Granted day:2016-05-19
Information query
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