Invention Grant
US09570680B2 Method for fabricating electronic devices having semiconductor memory unit
有权
一种具有半导体存储单元的电子器件的制造方法
- Patent Title: Method for fabricating electronic devices having semiconductor memory unit
- Patent Title (中): 一种具有半导体存储单元的电子器件的制造方法
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Application No.: US14145782Application Date: 2013-12-31
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Publication No.: US09570680B2Publication Date: 2017-02-14
- Inventor: Jae-Heon Kim , Sung-Koo Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2013-0097370 20130816
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L45/00 ; H01L21/027 ; H01L21/033 ; H01L21/311 ; H01L43/08 ; H01L27/22 ; H01L27/24 ; H01L21/768
Abstract:
Devices and method based on disclosed technology include, among others, a method for capable of providing asymmetrical arrangement of hole patterns while improving non-uniformity of an electronic device. Specifically, a method for fabricating hole patterns in one implementation includes forming a mask pattern which is defined with hole patterns of an asymmetrical arrangement with different longitudinal and transverse intervals, over a layer to be etched; and etching the layer to be etched, using the mask pattern as an etch barrier.
Public/Granted literature
- US20150050794A1 METHOD FOR FABRICATING ELECTRONIC DEVICES HAVING SEMICONDUCTOR MEMORY UNIT Public/Granted day:2015-02-19
Information query
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