Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14916074Application Date: 2014-09-10
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Publication No.: US09571088B2Publication Date: 2017-02-14
- Inventor: Masaki Wasekura
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2013-227679 20131031
- International Application: PCT/JP2014/073958 WO 20140910
- International Announcement: WO2015/064222 WO 20150507
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K17/16 ; H03K17/082

Abstract:
A semiconductor device includes a transistor; a diode configured to be connected in reverse-parallel with the transistor; a sense transistor configured to generate a sense current depending on a current flowing in the transistor; a sense diode configured to generate a sense diode current depending on a current flowing in the diode; a resistor part configured to have one terminal connected with an emitter of the sense transistor and an anode of the sense diode, and another terminal connected with an emitter of the transistor and an anode of the diode, and to have the sense current or the sense diode current flow in the resistor part; and a resistance value control unit configured to differentiate a resistance value of the resistor part for a case where the sense current flows in the resistor part, and for a case where the sense diode current flows in the resistor part.
Public/Granted literature
- US20160233856A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-08-11
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