Invention Grant
- Patent Title: Image-sensing method having a very short integration time
- Patent Title (中): 具有非常短的积分时间的图像感测方法
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Application No.: US14646037Application Date: 2013-11-06
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Publication No.: US09571761B2Publication Date: 2017-02-14
- Inventor: Thierry Ligozat , Bruno Diasparra
- Applicant: E2V Semiconductors
- Applicant Address: FR Saint Egreve
- Assignee: E2V SEMICONDUCTORS
- Current Assignee: E2V SEMICONDUCTORS
- Current Assignee Address: FR Saint Egreve
- Agency: Hauptman Ham, LLP
- Priority: FR1261271 20121127
- International Application: PCT/EP2013/073196 WO 20131106
- International Announcement: WO2014/082827 WO 20140605
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N5/353 ; H04N5/222 ; H01L27/146 ; H04N5/374 ; H04N5/378

Abstract:
The invention relates to image sensors, and more particularly to matrix sensors having active pixels in CMOS technology. According to the invention, a method for imaging a scene with a very short integration time, by using a standard image sensor comprising a matrix of pixels, comprising photodiodes, and charge storage nodes, is provided. Two images of the same scene are produced under identical light conditions, one of the images corresponding to integration of charges during a first time interval with a duration Tint and the other image corresponding to a second time interval with a duration T′int longer than Tint, and a difference between these two images is established, representing an image integrated during a time interval T′int−Tint. The light may be provided by a light pulse (IMP). This method may be used for observing points in a scene that lie at a well-determined distance, the brevity of the integration time allowing good precision of the observation distance.
Public/Granted literature
- US20150304577A1 IMAGE-SENSING METHOD HAVING A VERY SHORT INTEGRATION TIME Public/Granted day:2015-10-22
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