Invention Grant
US09572258B2 Method of forming a substrate core with embedded capacitor and structures formed thereby
有权
用嵌入式电容器形成衬底芯的方法和由此形成的结构
- Patent Title: Method of forming a substrate core with embedded capacitor and structures formed thereby
- Patent Title (中): 用嵌入式电容器形成衬底芯的方法和由此形成的结构
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Application No.: US11027386Application Date: 2004-12-30
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Publication No.: US09572258B2Publication Date: 2017-02-14
- Inventor: Sriram Srinivasan , John S. Guzek , Cengiz A. Palanduz , Victor Prokofiev , Joel A. Auernheimer
- Applicant: Sriram Srinivasan , John S. Guzek , Cengiz A. Palanduz , Victor Prokofiev , Joel A. Auernheimer
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H05K3/36
- IPC: H05K3/36 ; H05K1/16 ; H01G4/10 ; H01G4/12 ; H01G4/33 ; H05K3/42 ; H05K3/46
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.
Public/Granted literature
- US20060143886A1 Forming a substrate core with embedded capacitor and structures formed thereby Public/Granted day:2006-07-06
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