Invention Grant
US09573809B2 Method of forming a metal chalcogenide material and methods of forming memory cells including same
有权
形成金属硫族化物材料的方法和形成包含它的记忆体的方法
- Patent Title: Method of forming a metal chalcogenide material and methods of forming memory cells including same
- Patent Title (中): 形成金属硫族化物材料的方法和形成包含它的记忆体的方法
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Application No.: US13435216Application Date: 2012-03-30
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Publication No.: US09573809B2Publication Date: 2017-02-21
- Inventor: Chet E. Carter
- Applicant: Chet E. Carter
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L45/00
- IPC: H01L45/00 ; C01B17/20 ; C01B19/04 ; H01L21/02
Abstract:
A method of forming a metal chalcogenide material. The method comprises exposing a metal to a solution comprising a chalcogenide element source compound and an acid. Methods of forming memory cells including the metal chalcogenide material are also disclosed.
Public/Granted literature
- US20130260527A1 METHOD OF FORMING A METAL CHALCOGENIDE MATERIAL AND METHODS OF FORMING MEMORY CELLS INCLUDING SAME Public/Granted day:2013-10-03
Information query
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