Invention Grant
US09574271B2 Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film
有权
用于形成金属氧化物膜的方法，金属氧化物膜和用于形成金属氧化物膜的装置
- Patent Title: Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film
- Patent Title (中): 用于形成金属氧化物膜的方法，金属氧化物膜和用于形成金属氧化物膜的装置
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Application No.: US13383766Application Date: 2009-09-02
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Publication No.: US09574271B2Publication Date: 2017-02-21
- Inventor: Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
- Applicant: Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
- Applicant Address: JP Tokyo JP Kyoto
- Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION,KYOTO UNIVERSITY
- Current Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION,KYOTO UNIVERSITY
- Current Assignee Address: JP Tokyo JP Kyoto
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/JP2009/065314 WO 20090902
- International Announcement: WO2011/027425 WO 20110310
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C18/12 ; H01L31/18 ; H01G9/20 ; H01L29/786
Abstract:
The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.
Public/Granted literature
- US20120112187A1 METHOD FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM AND APPARATUS FOR FORMING METAL OXIDE FILM Public/Granted day:2012-05-10
Information query
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