Invention Grant
- Patent Title: Metal nanowire thin-films
- Patent Title (中): 金属纳米线薄膜
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Application No.: US13061745Application Date: 2009-09-01
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Publication No.: US09574272B2Publication Date: 2017-02-21
- Inventor: Gil Markovich , Daniel Azulai , Olga Krichevski
- Applicant: Gil Markovich , Daniel Azulai , Olga Krichevski
- Applicant Address: IL Tel-Aviv
- Assignee: RAMOT AT TEL-AVIV UNIVERSITY LTD
- Current Assignee: RAMOT AT TEL-AVIV UNIVERSITY LTD
- Current Assignee Address: IL Tel-Aviv
- Agency: Cantor Colburn LLP
- International Application: PCT/IL2009/000842 WO 20090901
- International Announcement: WO2010/026571 WO 20100311
- Main IPC: C23C18/14
- IPC: C23C18/14 ; C23C18/44 ; C23C18/48 ; C23C18/16 ; C23C18/34 ; C23C18/40 ; H05K3/10 ; H05K3/18
Abstract:
A conductive nanowire film based on a high aspect-ratio metal is disclosed. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.
Public/Granted literature
- US20110162870A1 METAL NANOWIRE THIN-FILMS Public/Granted day:2011-07-07
Information query
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