Invention Grant
US09574287B2 Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
有权
在石墨烯封端的晶片上的氮化镓材料和器件沉积及其形成方法
- Patent Title: Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
- Patent Title (中): 在石墨烯封端的晶片上的氮化镓材料和器件沉积及其形成方法
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Application No.: US14038139Application Date: 2013-09-26
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Publication No.: US09574287B2Publication Date: 2017-02-21
- Inventor: Can Bayram , Christos D. Dimitrakopoulos , Keith E. Fogel , Jeehwan Kim , John A. Ott , Devendra K. Sadana
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick, LLC
- Agent Yuanmin Cai
- Main IPC: C30B25/00
- IPC: C30B25/00 ; C30B25/18 ; C30B29/40 ; H01L21/02 ; H01L29/16 ; H01L33/00 ; H01L33/32 ; C30B29/02 ; H01L33/12
Abstract:
A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.
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