Invention Grant
US09575113B2 Insulated-gate bipolar transistor collector-emitter saturation voltage measurement
有权
绝缘栅双极晶体管集电极 - 发射极饱和电压测量
- Patent Title: Insulated-gate bipolar transistor collector-emitter saturation voltage measurement
- Patent Title (中): 绝缘栅双极晶体管集电极 - 发射极饱和电压测量
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Application No.: US14175503Application Date: 2014-02-07
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Publication No.: US09575113B2Publication Date: 2017-02-21
- Inventor: Michael Mankel , Carlos Castro-Serrato
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; G01K7/01
Abstract:
In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.
Public/Granted literature
- US20150226787A1 INSULATED-GATE BIPOLAR TRANSISTOR COLLECTOR-EMITTER SATURATION VOLTAGE MEASUREMENT Public/Granted day:2015-08-13
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