Invention Grant
- Patent Title: Single-chip two-axis magnetic field sensor
- Patent Title (中): 单芯片双轴磁场传感器
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Application No.: US14110106Application Date: 2012-05-23
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Publication No.: US09575143B2Publication Date: 2017-02-21
- Inventor: James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
- Applicant: James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
- Applicant Address: CN Zhangjiagang
- Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee Address: CN Zhangjiagang
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201110084594 20110406; CN201110315913 20111018
- International Application: PCT/CN2012/075956 WO 20120523
- International Announcement: WO2012/136158 WO 20121011
- Main IPC: G01R33/09
- IPC: G01R33/09

Abstract:
The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
Public/Granted literature
- US20140035573A1 SINGLE-CHIP TWO-AXIS MAGNETIC FIELD SENSOR Public/Granted day:2014-02-06
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