Invention Grant
US09575224B2 Mirror, projection objective with such mirror, and projection exposure apparatus for microlithography with such projection objective
有权
具有这种反射镜的镜面投影物镜,以及用于具有这种投射物镜的微光刻的投影曝光装置
- Patent Title: Mirror, projection objective with such mirror, and projection exposure apparatus for microlithography with such projection objective
- Patent Title (中): 具有这种反射镜的镜面投影物镜,以及用于具有这种投射物镜的微光刻的投影曝光装置
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Application No.: US13846785Application Date: 2013-03-18
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Publication No.: US09575224B2Publication Date: 2017-02-21
- Inventor: Rolf Freimann , Norman Baer , Guido Limbach , Thure Boehm , Gero Wittich
- Applicant: Carl Zeiss SMT GmbH
- Applicant Address: DE Oberkochen
- Assignee: Carl Zeiss SMT GmbH
- Current Assignee: Carl Zeiss SMT GmbH
- Current Assignee Address: DE Oberkochen
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE102010041397 20100927; DE102010041502 20100928
- Main IPC: F21V9/04
- IPC: F21V9/04 ; F21V9/06 ; G02B5/08 ; G02B5/20 ; B82Y10/00 ; G21K1/06

Abstract:
A mirror (1a; 1a′; 1b; 1b; 1c; 1c′) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P′″) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H′″) and a low refractive index layer (L′″). The layer arrangement has at least one graphene layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.
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