Invention Grant
- Patent Title: Probability-based remedial action for read disturb effects
- Patent Title (中): 基于概率的读取干扰效应的补救措施
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Application No.: US13802140Application Date: 2013-03-13
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Publication No.: US09575829B2Publication Date: 2017-02-21
- Inventor: Nian Niles Yang , Chris Avila , Steven Sprouse , Abhijeet Manohar , Yichao Huang
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/07 ; G11C29/50 ; G11C16/34 ; G11C29/42 ; G11C11/56 ; G11C29/04

Abstract:
A method may be performed in a data storage device that includes a memory and a controller, in response to a request to read data from the memory. The data is located within a first word line of the memory. The method includes accessing the data from the first word line and determining, based on a probability threshold, whether to perform a remedial action with respect to a second word line.
Public/Granted literature
- US20140281766A1 PROBABILITY-BASED REMEDIAL ACTION FOR READ DISTURB EFFECTS Public/Granted day:2014-09-18
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