Invention Grant
- Patent Title: Lithography aware leakage analysis
- Patent Title (中): 光刻感知泄漏分析
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Application No.: US14066272Application Date: 2013-10-29
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Publication No.: US09576098B2Publication Date: 2017-02-21
- Inventor: Emre Tuncer , Hui Zheng , Vivek Raghavan , Anirudh Devgan , Amir Ajami , Alessandra Nardi , Tao Lin , Pramod Thazhathethil , Alfred Wong
- Applicant: Synopsys, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Alston & Bird LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00

Abstract:
A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.
Public/Granted literature
- US20140181762A1 LITHOGRAPHY AWARE LEAKAGE ANALYSIS Public/Granted day:2014-06-26
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