Invention Grant
US09576623B2 Sense amplifier and semiconductor memory device employing the same
有权
感应放大器和采用该感测放大器的半导体存储器件
- Patent Title: Sense amplifier and semiconductor memory device employing the same
- Patent Title (中): 感应放大器和采用该感测放大器的半导体存储器件
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Application No.: US14974374Application Date: 2015-12-18
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Publication No.: US09576623B2Publication Date: 2017-02-21
- Inventor: Seongook Jung , Hanwool Jeong , Young Hwi Yang , Kyoman Kang
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2014-0185798 20141222
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/06 ; G11C7/08 ; G11C11/4091 ; G11C7/10 ; G11C11/419

Abstract:
The present disclosure herein relates to a sense amplifier and a semiconductor memory device employing the same. The sense amplifier includes an inverter including a pull-up transistor and a pull-down transistor, and a switching unit configured to change a connection relationship between the pull-up transistor and the pull-down transistor according to whether an input terminal of the inverter is precharged or a signal applied to the input terminal is sensed.
Public/Granted literature
- US20160181993A1 SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE EMPLOYING THE SAME Public/Granted day:2016-06-23
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