Invention Grant
- Patent Title: Phase change memory in a dual inline memory module
- Patent Title (中): 双联内存模块中的相变存储器
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Application No.: US14097125Application Date: 2013-12-04
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Publication No.: US09576662B2Publication Date: 2017-02-21
- Inventor: Shekoufeh Qawami , Jared E. Hulbert
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C14/00 ; G11C13/00 ; G11C11/406 ; G06F12/08 ; G11C11/00
Abstract:
Subject matter disclosed herein relates to management of a memory device.
Public/Granted literature
- US20140095781A1 PHASE CHANGE MEMORY IN A DUAL INLINE MEMORY MODULE Public/Granted day:2014-04-03
Information query
