Invention Grant
US09576737B2 Parallel capacitor and high frequency semiconductor device 有权
并联电容器和高频半导体器件

Parallel capacitor and high frequency semiconductor device
Abstract:
Certain embodiments provide a parallel capacitor including a substrate configured by a dielectric, upper electrodes, and a lower electrode. The upper electrodes are provided in an upper electrode region on a surface of the substrate. The lower electrode is provided on an entire surface of a lower electrode region including a region corresponding to the upper electrode region of an underside of the substrate, the lower electrode region being wider than the region. A single-operation capacity of each capacitor on both ends is smaller than the single-operation capacity of a capacitor in a center portion. The capacitors on the both ends are configured by the upper electrodes arranged on both ends of the substrate, the lower electrode, and the substrate. The capacitor in the center portion is configured by the upper electrode arranged in a center portion of the substrate, the lower electrode, and the substrate.
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