Invention Grant
- Patent Title: Parallel capacitor and high frequency semiconductor device
- Patent Title (中): 并联电容器和高频半导体器件
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Application No.: US14632383Application Date: 2015-02-26
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Publication No.: US09576737B2Publication Date: 2017-02-21
- Inventor: Kazutaka Takagi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-082787 20140414
- Main IPC: H01G5/16
- IPC: H01G5/16 ; H01G4/38 ; H03K5/13 ; H01L23/66 ; H01L27/08 ; H01L49/02

Abstract:
Certain embodiments provide a parallel capacitor including a substrate configured by a dielectric, upper electrodes, and a lower electrode. The upper electrodes are provided in an upper electrode region on a surface of the substrate. The lower electrode is provided on an entire surface of a lower electrode region including a region corresponding to the upper electrode region of an underside of the substrate, the lower electrode region being wider than the region. A single-operation capacity of each capacitor on both ends is smaller than the single-operation capacity of a capacitor in a center portion. The capacitors on the both ends are configured by the upper electrodes arranged on both ends of the substrate, the lower electrode, and the substrate. The capacitor in the center portion is configured by the upper electrode arranged in a center portion of the substrate, the lower electrode, and the substrate.
Public/Granted literature
- US20150294794A1 PARALLEL CAPACITOR AND HIGH FREQUENCY SEMICONDUCTOR DEVICE Public/Granted day:2015-10-15
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