Invention Grant
- Patent Title: Tantalum capacitor
- Patent Title (中): 钽电容
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Application No.: US14508583Application Date: 2014-10-07
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Publication No.: US09576740B2Publication Date: 2017-02-21
- Inventor: Hong Kyu Shin , Jae Bum Cho , Jae Hyuk Choi , Wan Suk Yang , Hyoung Sun Ham , Hyun Sub Oh
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2014-0087519 20140711
- Main IPC: H01G9/08
- IPC: H01G9/08 ; H01G9/008 ; H01G9/052

Abstract:
A tantalum capacitor may include two tantalum wires exposed through two surfaces of a capacitor body opposing each other, first and second positive electrode terminals, connected to the tantalum wires, respectively, and disposed on two surfaces of a molded part opposing each other, and a negative electrode terminal disposed between the first and second positive electrode terminals. The negative electrode terminal may be electrically connected to the capacitor body by a via electrode or a pad electrode disposed between the negative electrode terminal and the capacitor body.
Public/Granted literature
- US20160012970A1 TANTALUM CAPACITOR Public/Granted day:2016-01-14
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