Invention Grant
US09576803B2 Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing process
有权
在鳍状场效应晶体管制造工艺中的接触形成之前调谐金属栅极功函数的方法
- Patent Title: Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing process
- Patent Title (中): 在鳍状场效应晶体管制造工艺中的接触形成之前调谐金属栅极功函数的方法
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Application No.: US14710619Application Date: 2015-05-13
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Publication No.: US09576803B2Publication Date: 2017-02-21
- Inventor: Kuo-Chih Lai , Yang-Ju Lu , Ching-Yun Chang , Yen-Chen Chen , Shih-Min Chou , Yun Tzu Chang , Fang-Yi Liu , Hsiang-Chieh Yen , Nien-Ting Ho
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/28 ; H01L21/3213 ; H01L29/45 ; H01L29/66
Abstract:
The present invention provides a method for metal gate work function tuning before contact formation in a fin-shaped field effect transistor (FinFET), where in the method comprises the following steps. (S1) providing a substrate having a metal gate structure on a side of the substrate, (S2) forming a titanium nitride (TiN) layer on the side of the substrate, and (S3) performing a gate annealing to tune work function of the metal gate structure.
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