Invention Grant
US09576837B2 Method of forming a flexible semiconductor layer and devices on a flexible carrier
有权
在柔性载体上形成柔性半导体层和器件的方法
- Patent Title: Method of forming a flexible semiconductor layer and devices on a flexible carrier
- Patent Title (中): 在柔性载体上形成柔性半导体层和器件的方法
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Application No.: US15146155Application Date: 2016-05-04
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Publication No.: US09576837B2Publication Date: 2017-02-21
- Inventor: Stephen W. Bedell , Devendra K. Sadana , Katherine L. Saenger , Abdelmajid Salhi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/768 ; H01L21/3213 ; H01L21/285 ; H01L23/528 ; H01L29/04 ; H01L21/027 ; H01L23/532
Abstract:
A method for fabricating a semiconductor device comprises providing a preformed spalled structure comprising a stressor layer stack on a first surface of a semiconductor substrate; forming an interfacial release layer on an exposed second surface of the semiconductor substrate; adhesively bonding the interfacial release layer to a rigid handle substrate using an epoxy; removing at least a portion of the stressor layer stack from the first surface of the semiconductor substrate; processing the semiconductor substrate; and removing the semiconductor substrate from the interfacial release layer to impart flexibility to the semiconductor substrate.
Public/Granted literature
- US20170011947A1 Method of Forming a Flexible Semiconductor Layer and Devices on a Flexible Carrier Public/Granted day:2017-01-12
Information query
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