A method for manufacturing a semiconductor device includes forming a contact area opening in a dielectric structure, depositing a contact area metal in the contact area opening, forming a metal cap layer on the contact area metal, forming one or more dielectric layers on the metal cap layer, forming one or more hard mask layers on the one or more dielectric layers, forming a metallization opening through the one or more dielectric and hard mask layers, wherein the metallization opening exposes the metal cap layer, removing the one or more hard mask layers, and forming a metallization layer in the metallization opening on the metal cap layer.