Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US15052377Application Date: 2016-02-24
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Publication No.: US09576905B2Publication Date: 2017-02-21
- Inventor: Taishi Ishikura , Atsunobu Isobayashi , Akihiro Kajita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2015-049850 20150312
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L27/115 ; H01L21/311 ; H01L21/8234 ; H01L21/02

Abstract:
A semiconductor device includes a first wiring comprising a first conductive material on a semiconductor layer, a second wiring comprising the first conductive material on the semiconductor layer, a third wiring comprising a second conductive material different from the first conductive material, and an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring. The second wiring is provided on at least two sides of the third wiring, and a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction. The first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer.
Public/Granted literature
- US20160268200A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-09-15
Information query
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