Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US14276665Application Date: 2014-05-13
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Publication No.: US09576913B2Publication Date: 2017-02-21
- Inventor: Shin Soyano
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2011-269190 20111208
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L23/00 ; H02M7/00 ; H01L23/36 ; H05K7/14 ; H01L25/16 ; H01L23/02 ; H01L23/50 ; H05K13/00 ; H01L23/049 ; H01L23/373 ; H01L23/473
Abstract:
A semiconductor device that improves noise performance includes a circuit substrate, an enclosing case, and a metal part. A control circuit is mounted on the front surface of the circuit substrate. The enclosing case is a resin case in which semiconductor elements are installed. The metal part, included inside the enclosing case, includes a first mounting portion, a second mounting portion, and a bus bar. The first mounting portion mounts the circuit substrate on the enclosing case, and is connected to a ground pattern of the circuit substrate when mounting. The second mounting portion mounts an external instrument on the enclosing case, and is grounded when mounting. The bus bar connects the first mounting portion and second mounting portion.
Public/Granted literature
- US20140246768A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2014-09-04
Information query
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