Invention Grant
US09576923B2 Semiconductor chip with patterned underbump metallization and polymer film
有权
半导体芯片具有图案化的底部金属化和聚合物膜
- Patent Title: Semiconductor chip with patterned underbump metallization and polymer film
- Patent Title (中): 半导体芯片具有图案化的底部金属化和聚合物膜
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Application No.: US14242008Application Date: 2014-04-01
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Publication No.: US09576923B2Publication Date: 2017-02-21
- Inventor: Roden R. Topacio , Suming Hu , Yip Seng Low
- Applicant: Roden R. Topacio , Suming Hu , Yip Seng Low
- Applicant Address: CA Markham
- Assignee: ATI Technologies ULC
- Current Assignee: ATI Technologies ULC
- Current Assignee Address: CA Markham
- Agent Timothy M. Honeycutt
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H05K3/34 ; H05K3/46

Abstract:
Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.
Public/Granted literature
- US20150279794A1 SEMICONDUCTOR CHIP WITH PATTERNED UNDERBUMP METALLIZATION AND POLYMER FILM Public/Granted day:2015-10-01
Information query
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