Invention Grant
- Patent Title: Thermally conductive structure for heat dissipation in semiconductor packages
- Patent Title (中): 半导体封装中散热导热结构
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Application No.: US14075139Application Date: 2013-11-08
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Publication No.: US09576930B2Publication Date: 2017-02-21
- Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/50 ; H01L23/00 ; H01L23/36 ; H01L23/373 ; H01L21/48 ; H01L23/31
Abstract:
A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.
Public/Granted literature
- US20150130045A1 THERMALLY CONDUCTIVE STRUCTURE FOR HEAT DISSIPATION IN SEMICONDUCTOR PACKAGES Public/Granted day:2015-05-14
Information query
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