Invention Grant
- Patent Title: POC process flow for conformal recess fill
- Patent Title (中): POC工艺流程用于保形凹坑填充
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Application No.: US14862258Application Date: 2015-09-23
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Publication No.: US09576954B1Publication Date: 2017-02-21
- Inventor: Andrew M. Greene , Sanjay C. Mehta , Balasubramanian S. Pranatharthiharan , Ruilong Xie
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/772 ; H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L21/3105 ; H01L21/311 ; H01L21/762 ; H01L29/06
Abstract:
A method of filling trenches between gates includes forming a first and a second dummy gate over a substrate, the first and second dummy gates including a sacrificial gate material and a hard mask layer; forming a first gate spacer along a sidewall of the first dummy gate and a second gate spacer along a sidewall of the second dummy gate; performing an epitaxial growth process to form a source/drain on the substrate between the first and second dummy gates; disposing a conformal liner over the first and second dummy gates and the source/drain; disposing an oxide on the conformal liner between the first and second dummy gates; recessing the oxide to a level below the hard mask layers of the first and second dummy gates to form a recessed oxide; and depositing a spacer material over the recessed oxide between the first dummy gate and the second dummy gate.
Information query
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