Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
- Patent Title (中): 三维半导体存储器件
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Application No.: US14474383Application Date: 2014-09-02
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Publication No.: US09576970B2Publication Date: 2017-02-21
- Inventor: Ki Hong Lee , Seung Ho Pyi , Seok Min Jeon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0059920 20120604
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/12 ; H01L29/66 ; H01L29/788 ; H01L29/792
Abstract:
A semiconductor device includes a first source layer; at least one of a second source layer, the second source layer formed substantially in the first source layer; a plurality of conductive layers stacked substantially over the first source layer; channel layers that pass through the plurality of conductive layers and couple to the second source layer; and at least one of a third source layer, the third source layer formed substantially in the second source layer, wherein the third source layer passes through the second source layer and is coupled to the first source layer.
Public/Granted literature
- US20140367765A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-12-18
Information query
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