Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14821445Application Date: 2015-08-07
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Publication No.: US09576973B2Publication Date: 2017-02-21
- Inventor: Hyun Ho Lee , Jong Man Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0029782 20150303
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L21/28 ; H01L23/528 ; H01L23/532 ; H01L21/768
Abstract:
Disclosed is a semiconductor device, including: stack structures including interlayer insulating patterns and conductive line patterns, which are alternately stacked, and separated by a first slit; string pillars passing through the stack structures; and dummy holes passing through top portions of the stack structures to be spaced apart from bottom surface of the stack structures and disposed between the string pillars.
Public/Granted literature
- US20160260735A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-09-08
Information query
IPC分类:
