Invention Grant
US09576980B1 FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
有权
FinFET器件具有在相同半导体结构上具有不同厚度的栅极电介质结构
- Patent Title: FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure
- Patent Title (中): FinFET器件具有在相同半导体结构上具有不同厚度的栅极电介质结构
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Application No.: US14830868Application Date: 2015-08-20
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Publication No.: US09576980B1Publication Date: 2017-02-21
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Theodorus E. Standaert , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L27/12 ; H01L29/66 ; H01L21/28 ; H01L29/51 ; H01L21/8234
Abstract:
FinFET devices are formed on the same semiconductor structure wherein at least one finFET device has a gate dielectric structure that is different in thickness relative to a gate dielectric structure of at least one other finFET device. The finFET devices are formed as part of the same fabrication process.
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