Invention Grant
- Patent Title: Photo sensor module
- Patent Title (中): 照片传感器模块
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Application No.: US14796050Application Date: 2015-07-10
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Publication No.: US09576991B2Publication Date: 2017-02-21
- Inventor: Francois Hebert , Seong Min Choe
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2014-0107936 20140819
- Main IPC: H01L31/08
- IPC: H01L31/08 ; H01L31/09 ; H01L27/144

Abstract:
The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer.
Public/Granted literature
- US20160056186A1 PHOTO SENSOR MODULE Public/Granted day:2016-02-25
Information query
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