Invention Grant
US09577005B2 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
有权
具有氧化钽层的半导体器件和固态成像器件，其通过使必需的电极的材料或相对电极扩散而形成
- Patent Title: Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
- Patent Title (中): 具有氧化钽层的半导体器件和固态成像器件，其通过使必需的电极的材料或相对电极扩散而形成
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Application No.: US14743299Application Date: 2015-06-18
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Publication No.: US09577005B2Publication Date: 2017-02-21
- Inventor: Takashi Yokoyama
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2012-218000 20120928
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/146 ; H01L31/0224 ; H01L31/028 ; H01L31/18 ; B82Y20/00
Abstract:
There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.
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