Invention Grant
US09577041B2 Method for fabricating a transistor device with a tuned dopant profile
有权
制造具有调谐掺杂剂分布的晶体管器件的方法
- Patent Title: Method for fabricating a transistor device with a tuned dopant profile
- Patent Title (中): 制造具有调谐掺杂剂分布的晶体管器件的方法
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Application No.: US15053099Application Date: 2016-02-25
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Publication No.: US09577041B2Publication Date: 2017-02-21
- Inventor: Teymur Bakhishev , Sameer Pradhan , Thomas Hoffmann , Sachin R. Sonkusale
- Applicant: Mie Fujitsu Semiconductor Limited
- Applicant Address: JP Kuwana
- Assignee: Mie Fujitsu Semiconductor Limited
- Current Assignee: Mie Fujitsu Semiconductor Limited
- Current Assignee Address: JP Kuwana
- Agency: Baker Botts L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/10 ; H01L21/265 ; H01L29/66 ; H01L29/78 ; H01L21/02
Abstract:
A transistor device with a tuned dopant profile is fabricated by implanting one or more dopant migrating mitigating material such as carbon. The process conditions for the carbon implant are selected to achieve a desired peak location and height of the dopant profile for each dopant implant, such as boron. Different transistor devices with similar boron implants may be fabricated with different peak locations and heights for their respective dopant profiles by tailoring the carbon implant energy to effect tuned dopant profiles for the boron.
Public/Granted literature
- US20160172444A1 Method for Fabricating a Transistor Device With a Tuned Dopant Profile Public/Granted day:2016-06-16
Information query
IPC分类:
