Invention Grant
- Patent Title: Silicon carbide power bipolar devices with deep acceptor doping
- Patent Title (中): 具有深受体掺杂的碳化硅功率双极器件
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Application No.: US14671561Application Date: 2015-03-27
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Publication No.: US09577045B2Publication Date: 2017-02-21
- Inventor: Andrei Konstantinov
- Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/167 ; H01L29/10 ; H01L29/74 ; H01L29/732 ; H01L29/739 ; H01L29/423 ; H01L29/66
Abstract:
In a general aspect, a power semiconductor device can include a collector region disposed on a substrate, the collector region can include n-type silicon carbide (SiC). The power semiconductor device can also include a base region disposed on the collector region. The base region can include p-type SiC doped with gallium. The power semiconductor device can include an emitter region disposed on the base region. The emitter region can include n-type SiC carbide.
Public/Granted literature
- US20160035836A1 SILICON CARBIDE POWER BIPOLAR DEVICES WITH DEEP ACCEPTOR DOPING Public/Granted day:2016-02-04
Information query
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