Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
- Patent Title (中): 半导体器件结构及其形成方法
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Application No.: US14989259Application Date: 2016-01-06
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Publication No.: US09577049B1Publication Date: 2017-02-21
- Inventor: Shih-Yen Lin , Chong-Rong Wu , Chi-Wen Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.,National Taiwan University
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L29/45 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/443
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a semiconductor layer over the substrate. The semiconductor layer includes a transition metal chalcogenide. The semiconductor device structure includes a source electrode and a drain electrode over and connected to the semiconductor layer and spaced apart from each other by a gap. The source electrode and the drain electrode are made of graphene.
Information query
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