Invention Grant
- Patent Title: Structures and methods of fabricating dual gate devices
- Patent Title (中): 制造双栅极器件的结构和方法
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Application No.: US13039089Application Date: 2011-03-02
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Publication No.: US09577089B2Publication Date: 2017-02-21
- Inventor: Kyle Terrill , Yuming Bai , Deva Pattanayak , Zhiyun Luo
- Applicant: Kyle Terrill , Deva Pattanayak , Zhiyun Luo
- Applicant Address: US CA Santa Clara
- Assignee: Vishay-Siliconix
- Current Assignee: Vishay-Siliconix
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/417 ; H01L29/423
Abstract:
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1 so that the surfaces are flush with adjacent surfaces. Then, shallow trenches are formed in the substrate between the deep trenches, and second polysilicon (poly-2) is deposited into the shallow trenches. A second polysilicon polishing process is performed to planarize the exposed surface of the poly-2 so that the surface is flush with adjacent surfaces. Metal contacts to the poly-1 and the poly-2 are then formed.
Public/Granted literature
- US20110254084A1 STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES Public/Granted day:2011-10-20
Information query
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