The present invention relates to a light emitting die component formed by multilayer structures. The light emitting die component comprises a semiconductor structure (103) comprising: an n-type layer (104), an active region (106) and a p-type layer (108); a p-contact layer (110) arranged to be in electrical contact with said p-type layer (108); an n-contact layer (116) arranged to be in electrical contact with said n-type layer (104); a first dielectric layer (114) arranged to electrically isolate said p-contact layer (110) from said n-contact layer (116); a thermal spreading layer (120) comprising a first and a second region (120a, 120b) being electrically isolated from each other, wherein said first region (120a) forming an anode electrode of said light emitting die component and said second region (120b) forming a cathode electrode of said light emitting die component; a second dielectric layer (118) arranged to electrically isolate said n-contact layer (116) from said first region (120a) or to electrically isolate said p-contact layer (110) from said second region (120b); a third dielectric layer (122) arranged to electrically isolate said first and second regions (120a, 120b); and an interconnect pad (124) enabling interconnection with a submount (126).