Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14643762Application Date: 2015-03-10
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Publication No.: US09577625B2Publication Date: 2017-02-21
- Inventor: Yong-Hoon Kim , Hyun-Woo Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0008721 20100129
- Main IPC: H03H11/26
- IPC: H03H11/26 ; H03K5/159 ; H03K5/15

Abstract:
A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the delay control code and to output a first output signal; and a second delay circuit configured to delay the second delayed input signal in response to the delay control code and to output a second output signal.
Public/Granted literature
- US20150188529A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
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