Invention Grant
- Patent Title: MEMS chip and manufacturing method therefor
- Patent Title (中): MEMS芯片及其制造方法
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Application No.: US14411537Application Date: 2013-06-29
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Publication No.: US09580301B2Publication Date: 2017-02-28
- Inventor: Dan Dai , Xinwei Zhang , Guoping Zhou , Changfeng Xia
- Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Polsinelli PC
- Priority: CN201210234964 20120706
- International Application: PCT/CN2013/078523 WO 20130629
- International Announcement: WO2014/005496 WO 20140109
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.
Public/Granted literature
- US20150151958A1 MEMS CHIP AND MANUFACTURING METHOD THEREFOR Public/Granted day:2015-06-04
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