Invention Grant
US09580808B2 Apparatus for performing a plasma chemical vapour deposition process 有权
用于进行等离子体化学气相沉积工艺的装置

Apparatus for performing a plasma chemical vapour deposition process
Abstract:
The invention relates to an apparatus for performing a plasma chemical vapor deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity extending in a circumferential direction around a cylindrical axis. The resonator is further provided with side wall portions bounding the resonant cavity in the cylindrical direction, and with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly. Further, the slit configuration includes slit sections that are mutually offset in the cylindrical direction.
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